MS100N02HK8

The MS100N02HK8 is a high performance trench N-ch

MOSFETs with extreme high cell density, which provide

excellent RDS(ON) and gate charge for most of the small 

power switching and load switch applications.

The device meets the RoHS and Green Product 

requirement with full function reliability approved.

Features

 Advanced high cell density Trench technology

 Low RDS(ON)

 Low Gate Charge

 Green Device Available

 with ESD HBM 8KV protection